189 citations · 933 across the 20 of their papers we have counts for
12 papers · 1 filter
Effective uniaxial dielectric function tensor and optical phonons in ()-plane oriented -GaO films with equally-distributed six-fold rotation domains
Alyssa Mock, Steffen Richter, Alexis Papamichail +11
Monoclinic -GaO films grown on -plane sapphire have been shown to exhibit six -plane oriented domains, which are equally-spaced-by-rotation around the su…
Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3
Nathan D. Rock, Haobo Yang, Brian Eisner +9
Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equi…
Enhancing the Electron Mobility in Si-doped (010) -GaO films with Low-Temperature Buffer Layers
Arkka Bhattacharyya, Carl Peterson, Takeki Itoh +6
We demonstrate a new substrate cleaning and buffer growth scheme in -GaO epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure,…
High Permittivity Dielectric Field-Plated Vertical (001) -GaO Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of 1 GW/cm
Saurav Roy, Arkka Bhattacharyya, Praneeth Ranga +3
This paper presents vertical (001) oriented -GaO field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift la…
In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition
Saurav Roy, Adrian E. Chmielewski, Arkka Bhattacharyya +5
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$…
N-type doping of LPCVD-grown \b{eta}-Ga2O3 thin films using solid-source germanium
Praneeth Ranga, Arkka Bhattacharyya, Luisa Whittaker-Brooks +2
We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical…
The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3
Prashanth Gopalan, Sean Knight, Ashish Chanana +11
The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequenc…
Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films
Anil Kumar Rajapitamahuni, Laxman Raju Thoutam, Praneeth Ranga +2
By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase…
Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence
Rujun Sun, Yu Kee Ooi, Praneeth Ranga +3
In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor…
Highly tunable polarization-engineered two-dimensional electron gas in -AlGaO3 / -Ga2O3 heterostructures
Praneeth Ranga, Sung Beom Cho, Rohan Mishra +1
We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at -AlGaO3 / -Ga2O3 heterointerface and the effect of spontaneous polarization…
Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy
Praneeth Ranga, Arkka Bhattacharyya, Ashwin Rishinaramangalam +4
We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are character…
MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures
Praneeth Ranga, Ashwin Rishinaramangalam, Joel Varley +3
We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure…