High Permittivity Dielectric Field-Plated Vertical (001) $\beta$-Ga${}_2$O${}_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm${}^2$

Abstract

This paper presents vertical (001) oriented $\beta$-Ga${}_2$O${}_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $\mu m$ was used to enable a punch-through (PT) field profile and very low differential specific on-resistance (R${}_{on-sp}$) of 0.32 m$\Omega$-cm${}^2$. The extreme permittivity field plate oxide facilitated the lateral spread of the electric field profile beyond the field plate edge and enabled a breakdown voltage ($V_{br}$) of 687 V. The edge termination efficiency increases from 13.5 $\%$ for non-field plated structure to 63 $\%$ for high permittivity field plate structure. The surface breakdown electric field was extracted to be 5.45 MV/cm at the center of the anode region using TCAD simulations. The high permittivity field plated SBD demonstrated a record high Baliga figure of merit (BFOM) of 1.47 GW/cm${}^2$ showing the potential of Ga${}_2$O${}_3$ power devices for multi-kilovolt class applications.

References in corpus (2)

• Metal$/BaTi{O}_3/\beta -G{a}_2{O}_3$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field
• Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

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