J. Leach

activity

20182022

most citedHigh Permittivity Dielectric Field-Plated Vertical (001)

β

-Ga

_{2}

_{3}

Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of

>

1 GW/cm

^{2}

189 citations · 199 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2022★ 3 cited

Ultra-Wide Bandgap Ga $_{2}$ O $_{3}$ -on-SiC MOSFETs

Yiwen Song, Arkka Bhattacharyya, Anwarul Karim +8

Ulta-wide bandgap semiconductors based on $β$ -Ga $_{2}$ O $_{3}$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's w…

physics.app-ph2021★ 4 cited

Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Malik Hassanaly, Hariswaran Sitaraman, Kevin L. Schulte +5

Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cel…

cond-mat.mtrl-sci2021★ 189 cited

High Permittivity Dielectric Field-Plated Vertical (001) $β$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm $^{2}$

Saurav Roy, Arkka Bhattacharyya, Praneeth Ranga +3

This paper presents vertical (001) oriented $β$ -Ga $_{2}$ O $_{3}$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift la…

physics.app-ph2019★ 2 cited

Optical and structural properties of Si doped $β$ -Ga $_{2}$ O $_{3}$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy

Bahadir Kucukgok, David J. Mandia, Jacob H. Leach +6

We report the optical, electrical, and structural properties of Si doped $β$ -Ga $_{2}$ O $_{3}$ films grown on (010)-oriented $β$ -Ga $_{2}$ O $_{3}$ substrate via HVPE. Our results show that, de…

cond-mat.mtrl-sci2018★ 1 cited

High-quality, large-grain MoS2 films grown on 100 mm sapphire substrates using a novel molybdenum precursor

Paul Quayle, Bin Zhang, Jacob Leach +3

Two-dimensional MoS2 is a crystalline semiconductor with high potential for numerous technologies. Research in recent years has sought to exploit the direct band gap and high carri…

Ultra-Wide Bandgap Ga2​O3​-on-SiC MOSFETs

Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

High Permittivity Dielectric Field-Plated Vertical (001) β-Ga2​O3​ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of > 1 GW/cm2

Optical and structural properties of Si doped β-Ga2​O3​ (010) thin films homoepitaxially grown by halide vapor phase epitaxy

High-quality, large-grain MoS2 films grown on 100 mm sapphire substrates using a novel molybdenum precursor

Ultra-Wide Bandgap Ga $_{2}$ O $_{3}$ -on-SiC MOSFETs

High Permittivity Dielectric Field-Plated Vertical (001) $β$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm $^{2}$

Optical and structural properties of Si doped $β$ -Ga $_{2}$ O $_{3}$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy