J. Leach

activity

20182021

most citedSurface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

4 citations · 6 across the 2 of their papers we have counts for

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physics.app-ph2021★ 4 cited

Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Malik Hassanaly, Hariswaran Sitaraman, Kevin L. Schulte +5

Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cel…

physics.app-ph2019★ 2 cited

Optical and structural properties of Si doped $β$ -Ga $_{2}$ O $_{3}$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy

Bahadir Kucukgok, David J. Mandia, Jacob H. Leach +6

We report the optical, electrical, and structural properties of Si doped $β$ -Ga $_{2}$ O $_{3}$ films grown on (010)-oriented $β$ -Ga $_{2}$ O $_{3}$ substrate via HVPE. Our results show that, de…

Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Optical and structural properties of Si doped β-Ga2​O3​ (010) thin films homoepitaxially grown by halide vapor phase epitaxy

Optical and structural properties of Si doped $β$ -Ga $_{2}$ O $_{3}$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy