J. Leach

activity

20182022

most citedHigh Permittivity Dielectric Field-Plated Vertical (001)

β

-Ga

_{2}

_{3}

Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of

>

1 GW/cm

^{2}

189 citations · 199 across the 5 of their papers we have counts for

collaborators

Showing 2022Show all

1 paper · 1 filter

cond-mat.mtrl-sci2022★ 3 cited

Ultra-Wide Bandgap Ga $_{2}$ O $_{3}$ -on-SiC MOSFETs

Yiwen Song, Arkka Bhattacharyya, Anwarul Karim +8

Ulta-wide bandgap semiconductors based on $β$ -Ga $_{2}$ O $_{3}$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's w…

Ultra-Wide Bandgap Ga2​O3​-on-SiC MOSFETs

Ultra-Wide Bandgap Ga $_{2}$ O $_{3}$ -on-SiC MOSFETs