J. Leach

activity

20182022

most citedHigh Permittivity Dielectric Field-Plated Vertical (001)

β

-Ga

_{2}

_{3}

Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of

>

1 GW/cm

^{2}

189 citations · 199 across the 5 of their papers we have counts for

collaborators

Showing 2021Show all

2 papers · 1 filter

physics.app-ph2021★ 4 cited

Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Malik Hassanaly, Hariswaran Sitaraman, Kevin L. Schulte +5

Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cel…

cond-mat.mtrl-sci2021★ 189 cited

High Permittivity Dielectric Field-Plated Vertical (001) $β$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm $^{2}$

Saurav Roy, Arkka Bhattacharyya, Praneeth Ranga +3

This paper presents vertical (001) oriented $β$ -Ga $_{2}$ O $_{3}$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift la…

Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

High Permittivity Dielectric Field-Plated Vertical (001) β-Ga2​O3​ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of > 1 GW/cm2

High Permittivity Dielectric Field-Plated Vertical (001) $β$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm $^{2}$