J. Leach

activity

20182022

most citedHigh Permittivity Dielectric Field-Plated Vertical (001)

β

-Ga

_{2}

_{3}

Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of

>

1 GW/cm

^{2}

189 citations · 199 across the 5 of their papers we have counts for

collaborators

Showing 2019Show all

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physics.app-ph2019★ 2 cited

Optical and structural properties of Si doped $β$ -Ga $_{2}$ O $_{3}$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy

Bahadir Kucukgok, David J. Mandia, Jacob H. Leach +6

We report the optical, electrical, and structural properties of Si doped $β$ -Ga $_{2}$ O $_{3}$ films grown on (010)-oriented $β$ -Ga $_{2}$ O $_{3}$ substrate via HVPE. Our results show that, de…

Optical and structural properties of Si doped β-Ga2​O3​ (010) thin films homoepitaxially grown by halide vapor phase epitaxy

Optical and structural properties of Si doped $β$ -Ga $_{2}$ O $_{3}$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy