High Permittivity Dielectric Field-Plated Vertical (001) $\beta$-Ga${}_2$O${}_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm${}^2$

Saurav Roy, Arkka Bhattacharyya, Praneeth Ranga +3

This paper presents vertical (001) oriented $\beta$-Ga${}_2$O${}_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift la…