A. Osinsky

activity

20162023

β

-Ga

_{2}

_{3}

MESFETs with a Lateral Figure of Merit up to 355 MW/cm

^{2}

90 citations · 203 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2023

Band alignment of grafted monocrystalline Si (001)/ $β$ -Ga $_{2}$ O $_{3}$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Jiarui Gong, Jie Zhou, Ashok Dheenan +11

Beta-phase gallium oxide ( $β$ -Ga $_{2}$ O $_{3}$ ) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates.…

physics.app-ph2023

Monocrystalline Si/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes fabricated via grafting

Jiarui Gong, Donghyeok Kim, Hokyung Jang +19

The $β$ -Ga $_{2}$ O $_{3}$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…

cond-mat.mtrl-sci2022★ 35 cited

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ Films

Fikadu Alema, Carl Peterson, Arkka Bhattacharyya +3

We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ epitaxial films. Transfer le…

physics.app-ph2022★ 68 cited

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema +7

Field-plated (FP) depletion-mode MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN $_{x}$ dielectric…

physics.app-ph2021★ 90 cited

Multi-kV class $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm $^{2}$

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +5

We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOV…

cond-mat.mes-hall2016★ 10 cited

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

David A. Deen, Ross Miller, Andrei Osinsky +5

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated tra…

Band alignment of grafted monocrystalline Si (001)/β-Ga2​O3​ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Monocrystalline Si/β-Ga2​O3​ p-n heterojunction diodes fabricated via grafting

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown β-Ga2​O3​ and β-(Alx​Ga1​−x)2​ O3​ Films

4.4 kV β-Ga2​O3​ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2