A. Osinsky

activity

20162023

β

-Ga

_{2}

_{3}

MESFETs with a Lateral Figure of Merit up to 355 MW/cm

^{2}

90 citations · 203 across the 6 of their papers we have counts for

collaborators

Showing 2023Show all

2 papers · 1 filter

cond-mat.mtrl-sci2023

Band alignment of grafted monocrystalline Si (001)/ $β$ -Ga $_{2}$ O $_{3}$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Jiarui Gong, Jie Zhou, Ashok Dheenan +11

Beta-phase gallium oxide ( $β$ -Ga $_{2}$ O $_{3}$ ) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates.…

physics.app-ph2023

Monocrystalline Si/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes fabricated via grafting

Jiarui Gong, Donghyeok Kim, Hokyung Jang +19

The $β$ -Ga $_{2}$ O $_{3}$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…

Band alignment of grafted monocrystalline Si (001)/β-Ga2​O3​ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Monocrystalline Si/β-Ga2​O3​ p-n heterojunction diodes fabricated via grafting

Band alignment of grafted monocrystalline Si (001)/ $β$ -Ga $_{2}$ O $_{3}$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Monocrystalline Si/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes fabricated via grafting