Saurav Roy

activity

20202025

most citedHigh Permittivity Dielectric Field-Plated Vertical (001)

β

-Ga

_{2}

_{3}

Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of

>

1 GW/cm

^{2}

189 citations · 812 across the 21 of their papers we have counts for

collaborators

Showing cond-mat.mtrl-sciShow all

6 papers · 1 filter

cond-mat.mtrl-sci2024

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al $_{2}$ O $_{3}$ on $β$ -Ga $_{2}$ O $_{3}$

Saurav Roy, Arkka Bhattacharyya, Carl Peterson +1

In this article, we investigate the in-situ growth of Al $_{2}$ O $_{3}$ on $β$ -Ga $_{2}$ O $_{3}$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800°C. The Al$_2…

cond-mat.mtrl-sci2022

Enhancing the Electron Mobility in Si-doped (010) $β$ -Ga $_{2}$ O $_{3}$ films with Low-Temperature Buffer Layers

Arkka Bhattacharyya, Carl Peterson, Takeki Itoh +6

We demonstrate a new substrate cleaning and buffer growth scheme in $β$ -Ga $_{2}$ O $_{3}$ epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure,…

cond-mat.mtrl-sci2022★ 3 cited

Ultra-Wide Bandgap Ga $_{2}$ O $_{3}$ -on-SiC MOSFETs

Yiwen Song, Arkka Bhattacharyya, Anwarul Karim +8

Ulta-wide bandgap semiconductors based on $β$ -Ga $_{2}$ O $_{3}$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's w…

cond-mat.mtrl-sci2022★ 35 cited

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ Films

Fikadu Alema, Carl Peterson, Arkka Bhattacharyya +3

We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ epitaxial films. Transfer le…

cond-mat.mtrl-sci2021★ 189 cited

High Permittivity Dielectric Field-Plated Vertical (001) $β$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm $^{2}$

Saurav Roy, Arkka Bhattacharyya, Praneeth Ranga +3

This paper presents vertical (001) oriented $β$ -Ga $_{2}$ O $_{3}$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift la…

cond-mat.mtrl-sci2021★ 38 cited

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

Saurav Roy, Adrian E. Chmielewski, Arkka Bhattacharyya +5

High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$…

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al2​O3​ on β-Ga2​O3​

Enhancing the Electron Mobility in Si-doped (010) β-Ga2​O3​ films with Low-Temperature Buffer Layers

Ultra-Wide Bandgap Ga2​O3​-on-SiC MOSFETs

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown β-Ga2​O3​ and β-(Alx​Ga1​−x)2​ O3​ Films