64 citations · 162 across the 4 of their papers we have counts for
4 papers
Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends
Jani Jesenovec, Benjamin L. Dutton, Nicholas Stone-Weiss +6
In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 - are obtained, which show +0.20 eV increase in th…
In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition
Saurav Roy, Adrian E. Chmielewski, Arkka Bhattacharyya +5
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$…
Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels
Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +5
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is re…
Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy
Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +3
We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capa…