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20202022
most citedGrowth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

64 citations · 162 across the 4 of their papers we have counts for

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cond-mat.mtrl-sci2021★ 38 cited

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

Saurav Roy, Adrian E. Chmielewski, Arkka Bhattacharyya +5

High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$…