64 citations · 162 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2022★ 32 cited
Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends
Jani Jesenovec, Benjamin L. Dutton, Nicholas Stone-Weiss +6
In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 - are obtained, which show +0.20 eV increase in th…
cond-mat.mtrl-sci2021★ 38 cited
In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition
Saurav Roy, Adrian E. Chmielewski, Arkka Bhattacharyya +5
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$…