39 citations · 66 across the 3 of their papers we have counts for
3 papers
Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces
Hareesh Chandrasekar, K N Bhat, Muralidharan Rangarajan +2
The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to…
Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon
Hareesh Chandrasekar, Sandeep Kumar, K. L. Ganapathi +9
We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON Al…
An Early In-Situ Stress Signature of the AlN-Si Pre-growth Interface for Successful Integration of Nitrides with (111) Si
Hareesh Chandrasekar, Nagaboopathy Mohan, Abheek Bardhan +4
The integration of MOCVD grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface tha…