123 citations · 221 across the 7 of their papers we have counts for
6 papers · 1 filter
All-MOCVD-Grown Gallium Nitride Diodes with Ultra-Low Resistance Tunnel Junctions
Syed M. N. Hasan, Brendan P. Gunning, Zane J. -Eddine +5
We carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and p+-GaN layer thickness and experimentally demonstrate their influence…
Metal Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field
Zhanbo Xia, Hareesh Chandrasekar, Wyatt Moore +8
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an orde…
Velocity Saturation in La-doped BaSnO3 Thin Films
Hareesh Chandrasekar, Junao Cheng, Tianshi Wang +11
BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properti…
Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces
Hareesh Chandrasekar, K N Bhat, Muralidharan Rangarajan +2
The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to…
Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon
Hareesh Chandrasekar, Sandeep Kumar, K. L. Ganapathi +9
We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON Al…
An Early In-Situ Stress Signature of the AlN-Si Pre-growth Interface for Successful Integration of Nitrides with (111) Si
Hareesh Chandrasekar, Nagaboopathy Mohan, Abheek Bardhan +4
The integration of MOCVD grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface tha…