activity
20152020
most citedMetal Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

123 citations · 286 across the 13 of their papers we have counts for

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Showing 2015Show all

5 papers · 1 filter

cond-mat.mtrl-sci2015★ 11 cited

Optical Phonon Limited High Field Transport in Layered Materials

Hareesh Chandrasekar, Kolla L. Ganapathi, Shubhadeep Bhattacharjee +2

An optical phonon limited velocity model has been employed to investigate high-field transport in a selection of layered 2D materials for both, low-power logic switches with scaled…

cond-mat.mtrl-sci2015★ 13 cited

Estimation of background carrier concentration in fully depleted GaN films

Hareesh Chandrasekar, Manikant Singh, Srinivasan Raghavan +1

Buffer leakage is an important parasitic loss mechanism in AlGaN/GaN HEMTs and hence various methods are employed to grow semi-insulating buffer layers. Quantification of carrier c…

cond-mat.mes-hall2015★ 1 cited

Electron mobility in few-layer MoxW1-xS2

Hareesh Chandrasekar, Digbijoy Neelim Nath

In this letter, we theoretically study the electron mobility in few-layer MoxW1-xS2 as limited by various scattering mechanisms. The room temperature energy-dependent scattering ti…

cond-mat.mtrl-sci2015★ 24 cited

Growth Stress Induced Tunability of Dielectric Constant in Thin Films

K. V. L. V. Narayanachari, Hareesh Chandrasekar, Amiya Banerjee +4

It is demonstrated here that growth stress has a substantial effect on the dielectric constant of zirconia thin films. The correct combination of parameters - phase, texture and st…

cond-mat.mtrl-sci2015★ 7 cited

Spotting 2-D Atomic Layers on Aluminum Nitride Thin Films

Hareesh Chandrasekar, Krishna Bharadwaj B, Kranthi Kumar Vaidyuala +4

The availability of large-area substrates imposes an important constraint on the technological and commercial realization of devices made of layered materials. Aluminum nitride fil…