30 citations · 37 across the 7 of their papers we have counts for
7 papers
Impact of Quantum Well Thickness on Efficiency Loss in InGaN/GaN LEDs: Challenges for Thin-Well Designs
Xuefeng Li, Nick Pant, Sheikh Ifatur Rahman +4
We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms…
Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
Sheikh Ifatur Rahman, Mohammad Awwad, Chandan Joishi +4
GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performan…
Design and Simulation of a III-Nitride Light Emitting Transistor
Mohammad Awwad, Sheikh Ifatur Rahman, Chandan Joishi +2
This paper describes the design and characteristics of monolithically integrated three-terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel doping…
Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts
Chandan Joishi, Sheikh Ifatur Rahman, Zhanbo Xia +2
We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs) with selective injection of minority carriers across a p-GaN base and patterned regrown base contacts. The…
Demonstration of Multi-Active Region P-down Green LEDs with High Quantum Efficiency
Sheikh Ifatur Rahman, Robert Armitage, Siddharth Rajan
Longer wavelength emitters such as green LEDs display a pronounced efficiency drop at higher current densities, resulting in relatively low wall-plug efficiency. Multi-active regio…
-GaO Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching
Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan +3
-GaO trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demon…
Simulation of GaN-Based Light Emitting Diodes Incorporating Composition Fluctuation Effects
Sheikh Ifatur Rahman, Zane Jamal-Eddine, Zhanbo Xia +3
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last…