5 papers · 1 filter
Impact of Quantum Well Thickness on Efficiency Loss in InGaN/GaN LEDs: Challenges for Thin-Well Designs
Xuefeng Li, Nick Pant, Sheikh Ifatur Rahman +4
We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms…
Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
Sheikh Ifatur Rahman, Mohammad Awwad, Chandan Joishi +4
GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performan…
Design and Simulation of a III-Nitride Light Emitting Transistor
Mohammad Awwad, Sheikh Ifatur Rahman, Chandan Joishi +2
This paper describes the design and characteristics of monolithically integrated three-terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel doping…
Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts
Chandan Joishi, Sheikh Ifatur Rahman, Zhanbo Xia +2
We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs) with selective injection of minority carriers across a p-GaN base and patterned regrown base contacts. The…
Demonstration of Multi-Active Region P-down Green LEDs with High Quantum Efficiency
Sheikh Ifatur Rahman, Robert Armitage, Siddharth Rajan
Longer wavelength emitters such as green LEDs display a pronounced efficiency drop at higher current densities, resulting in relatively low wall-plug efficiency. Multi-active regio…