activity
20202026
most cited-GaO Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

30 citations · 30 across the 7 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2026

Modulation-Doped Field-Effect Transistors with 6 kV Breakdown

Julian Gervassi Saga, Joshua T Buontempo, Nabasindhu Das +3

modulation-doped field-effect transistors (MODFETs) incorporating a high-quality Al2O3 gate dielectric and SiNx passivation are demonstrate…

physics.app-ph2026

Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate

Md Abdul Hamid, Nabasindhu Das, Advait Gilankar +3

We report on the fabrication and temperature-dependent characterization of MOCVD-grown quasi-vertical AlN Schottky barrier diodes (SBDs) on bulk AlN substrates. The SBDs exhibited…

physics.app-ph2025

Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2

Nabasindhu Das, Cameron Gorsak, Ankita Kashyap +6

This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and e…

physics.app-ph2025

Demonstration of KV-Class \b{eta}-Ga2O3 Trench Junction Barrier Schottky Diodes with SpaceModulated Junction Termination Extension

Advait Gilankar, Julian Gervassi-Saga, Martha R. McCartney +4

In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSD) integrated with space-modulated junction termination extension (…

physics.app-ph2024

>3kV NiO/Ga2O3 Heterojunction Diodes with Space-Modulated Junction Termination Extension and Sub-1V Turn-on

Advait Gilankar, Abishek Katta, Nabasindhu Das +1

This work demonstrates high-performance vertical NiO/Ga2O3 heterojunction diodes (HJDs) with a 2-step space-modulated junction termination extension. Distinct from the current stat…

cond-mat.mtrl-sci2024

In-situ Patterned Damage-Free Etching of 3-Dimensional Structures in \b{eta}-Ga2O3 using Triethylgallium

Nabasindhu Das, Fikadu Alema, William Brand +4

In this work, we report on the anisotropic etching characteristics of \b{eta}-Ga2O3 using triethylgallium (TEGa) performed in-situ within an MOCVD chamber. At sufficiently high sub…