Sushovan Dhara

activity

20202025

most cited

β

-Ga

_{2}

_{3}

Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

30 citations · 44 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph2025★ 7 cited

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $β$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Dong Su Yu +6

This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al $_{2}$ O $_{3}$ dielectrics on (010) $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ …

cond-mat.mtrl-sci2023★ 6 cited

Anisotropic excitonic photocurrent in $β$ -Ga $_{2}$ O $_{3}$

Darpan Verma, Md Mohsinur Rahman Adnan, Sushovan Dhara +3

Polarization dependent photocurrent spectra are measured on a (001) $β$ -Ga $_{2}$ O $_{3}$ Schottky photodetector, where the linear polarization of light is rotated within the ab plan…

physics.app-ph2023★ 30 cited

$β$ -Ga $_{2}$ O $_{3}$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan +3

$β$ -Ga $_{2}$ O $_{3}$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demon…

cond-mat.mtrl-sci2021

Planar and 3-dimensional damage free etching of $β$ -Ga2O3 using atomic gallium flux

Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7

In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $β$ -Ga2O3. Etching of $β$ …

physics.app-ph2020★ 1 cited

Enhanced gas sensing performance and all-electrical room temperature operation enabled by a WSe2/MoS2 heterojunction

Sushovan Dhara, Himani Jawa, Sayantan Ghosh +2

Gas sensors built using two-dimensional (2D) MoS2 have conventionally relied on a change in field-effect-transistor (FET) channel resistance or a change in Schottky contact/pn homo…

Electrical and Structural Properties of In-Situ MOCVD Grown Al2​O3​/β-Ga2​O3​ and Al2​O3​/β-(Alx​Ga1−x​)2​O3​ MOSCAPs

Anisotropic excitonic photocurrent in β-Ga2​O3​

β-Ga2​O3​ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Planar and 3-dimensional damage free etching of β-Ga2O3 using atomic gallium flux

Enhanced gas sensing performance and all-electrical room temperature operation enabled by a WSe2/MoS2 heterojunction

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $β$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs

Anisotropic excitonic photocurrent in $β$ -Ga $_{2}$ O $_{3}$

$β$ -Ga $_{2}$ O $_{3}$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Planar and 3-dimensional damage free etching of $β$ -Ga2O3 using atomic gallium flux