C. Joishi

activity

20172020

most citedModulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

313 citations · 313 across the 1 of their papers we have counts for

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physics.app-ph2020

Charge trap layer enabled positive tunable V $_{f b}$ in $β$ -Ga $_{2}$ O $_{3}$ gate stacks for enhancement mode transistors

Dipankar Biswas, Chandan Joishi, Jayeeta Biswas +2

$β$ -Ga $_{2}$ O $_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving c…

Charge trap layer enabled positive tunable Vfb​ in β-Ga2​O3​ gate stacks for enhancement mode transistors

Charge trap layer enabled positive tunable V $_{f b}$ in $β$ -Ga $_{2}$ O $_{3}$ gate stacks for enhancement mode transistors