313 citations · 313 across the 9 of their papers we have counts for
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High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
Seungheon Shin, Hridibrata Pal, Jon Pratt +8
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency…
Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures
Seungheon Shin, Kyle Liddy, Yinxuan Zhu +5
We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are impo…
Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN
Yinxuan Zhu, Andrew A. Allerman, Chandan Joishi +7
We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record l…
Deep-recessed -GaO delta-doped field effect transistors with in situ epitaxial passivation
Chandan Joishi, Zhanbo Xia, John S. Jamison +4
We introduce a deep-recessed gate architecture in -GaO delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device desi…
High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures
Yuewei Zhang, Adam Neal, Zhanbo Xia +11
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodete…