313 citations · 810 across the 10 of their papers we have counts for
10 papers
Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3
Jared M. Johnson, Zhen Chen, Joel B. Varley +10
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the pr…
Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor
Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi +8
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulat…
Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +6
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflect…
Engineering One-Dimensional Quantum Stripes from Superlattices of Two-Dimensional Layered Materials
J. H. Gruenewald, J. Kim, H. S. Kim +10
One-dimensional (1D) quantum systems, which are predicted to exhibit novel states of matter in theory, have been elusive in experiment. Here we report a superlattice method of crea…
Enhanced metallic properties of SrRuO3 thin films via kinetically controlled pulsed laser epitaxy
J. Thompson, J. Nichols, S. Lee +10
Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostr…
Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates
Choong Hee Lee, Sriram Krishnamoorthy, Dante J. O'Hara +6
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work…