313 citations · 810 across the 10 of their papers we have counts for
7 papers · 1 filter
Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3
Jared M. Johnson, Zhen Chen, Joel B. Varley +10
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the pr…
Engineering One-Dimensional Quantum Stripes from Superlattices of Two-Dimensional Layered Materials
J. H. Gruenewald, J. Kim, H. S. Kim +10
One-dimensional (1D) quantum systems, which are predicted to exhibit novel states of matter in theory, have been elusive in experiment. Here we report a superlattice method of crea…
Enhanced metallic properties of SrRuO3 thin films via kinetically controlled pulsed laser epitaxy
J. Thompson, J. Nichols, S. Lee +10
Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostr…
Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates
Choong Hee Lee, Sriram Krishnamoorthy, Dante J. O'Hara +6
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work…
Three-Dimensional Imaging of Individual Point Defects Using Selective Detection Angles in Annular Dark Field Scanning Transmission Electron Microscopy
Jared M. Johnson, Soohyun Im, Jinwoo Hwang
We propose a new scanning transmission electron microscopy (STEM) technique that can realize the three-dimensional (3D) characterization of vacancies, lighter and heavier dopants w…
Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance
Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang +3
We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed…
Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters
Yuewei Zhang, Sriram Krishnamoorthy, Jared M. Johnson +6
Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region ne…