313 citations · 3.6k across the 69 of their papers we have counts for
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cond-mat.mes-hall2011★ 169 cited
Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride
Michele Esposto, Sriram Krishnamoorthy, Digbijoy N. Nath +3
We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interfac…
cond-mat.mtrl-sci2011★ 65 cited
Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering
Sriram Krishnamoorthy, Pil Sung Park, Siddharth Rajan
We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling…