313 citations · 3.6k across the 69 of their papers we have counts for
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Multi-kV class -GaO MESFETs with a Lateral Figure of Merit up to 355 MW/cm
Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +5
We demonstrate over 3 kV gate-pad-connected field plated (GPFP) -GaO lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOV…
Spalling-induced liftoff and transfer of electronic films using a van der Waals release layer
Eric W. Blanton, Michael J. Motala, Timothy A. Prusnick +7
Heterogeneous integration strategies are increasingly being employed to achieve more compact and capable electronics systems for multiple applications including space, electric veh…
High Permittivity Dielectric Field-Plated Vertical (001) -GaO Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of 1 GW/cm
Saurav Roy, Arkka Bhattacharyya, Praneeth Ranga +3
This paper presents vertical (001) oriented -GaO field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift la…
In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition
Saurav Roy, Adrian E. Chmielewski, Arkka Bhattacharyya +5
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$…
N-type doping of LPCVD-grown \b{eta}-Ga2O3 thin films using solid-source germanium
Praneeth Ranga, Arkka Bhattacharyya, Luisa Whittaker-Brooks +2
We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical…
130 mA/mm -GaO MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts
Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +5
We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown -GaO metal-semiconductor field effect transistor…