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Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals
Rujun Sun, Yu Kee Ooi, Arkka Bhattacharyya +4
Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionall…
The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3
Prashanth Gopalan, Sean Knight, Ashish Chanana +11
The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequenc…
Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films
Anil Kumar Rajapitamahuni, Laxman Raju Thoutam, Praneeth Ranga +2
By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase…
Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence
Rujun Sun, Yu Kee Ooi, Praneeth Ranga +3
In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor…
Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels
Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +5
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is re…
Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy
Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +3
We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capa…