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S. Krishnamoorthy

70 papers hereh-index 466k citations204 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author8
  • middle author28
  • last author32

Across the 68 of 70 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci37
  • physics.app-ph24
  • cond-mat.mes-hall6
  • physics.ins-det2
  • physics.optics1
same name
  • S. Krishnamoorthy — 17 papers, h 3
  • S. Krishnamoorthy — 17 papers, h 37
  • S. Krishnamoorthy — 4 papers, h 10
  • S. Krishnamoorthy — 4 papers, h 14
  • S. Krishnamoorthy — 3 papers, h 3
  • S. Krishnamoorthy — 2 papers, h 0

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20102026
most citedModulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

313 citations · 3.6k across the 69 of their papers we have counts for

collaborators
Showing 2019Show all

3 papers · 1 filter

cond-mat.mtrl-sci2019★ 50 cited

Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Ashwin Rishinaramangalam +4

We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are character…

cond-mat.mtrl-sci2019★ 61 cited

MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

Praneeth Ranga, Ashwin Rishinaramangalam, Joel Varley +3

We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure…

physics.app-ph2019

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone +6

We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.