313 citations · 3.6k across the 69 of their papers we have counts for
5 papers · 1 filter
NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination
Yizheng Liu, Saurav Roy, Carl Peterson +2
This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactiv…
Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ AlO on -GaO
Saurav Roy, Arkka Bhattacharyya, Carl Peterson +1
In this article, we investigate the in-situ growth of AlO on -GaO using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800°C. The Al$_2…
Record-High Electron Mobility and Controlled Low 10 cm Si-doping in (010) -GaO Epitaxial Drift Layers
Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit +7
We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 m thick -GaO films with electron concentrations in the 10 cm$^{…
Effective uniaxial dielectric function tensor and optical phonons in ()-plane oriented -GaO films with equally-distributed six-fold rotation domains
Alyssa Mock, Steffen Richter, Alexis Papamichail +11
Monoclinic -GaO films grown on -plane sapphire have been shown to exhibit six -plane oriented domains, which are equally-spaced-by-rotation around the su…
Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3
Nathan D. Rock, Haobo Yang, Brian Eisner +9
Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equi…