S. Krishnamoorthy

activity

20102026

most citedModulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

313 citations · 3.6k across the 69 of their papers we have counts for

collaborators

Showing 2022Show all

6 papers · 1 filter

cond-mat.mtrl-sci2022

Enhancing the Electron Mobility in Si-doped (010) $β$ -Ga $_{2}$ O $_{3}$ films with Low-Temperature Buffer Layers

Arkka Bhattacharyya, Carl Peterson, Takeki Itoh +6

We demonstrate a new substrate cleaning and buffer growth scheme in $β$ -Ga $_{2}$ O $_{3}$ epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure,…

cond-mat.mtrl-sci2022★ 3 cited

Ultra-Wide Bandgap Ga $_{2}$ O $_{3}$ -on-SiC MOSFETs

Yiwen Song, Arkka Bhattacharyya, Anwarul Karim +8

Ulta-wide bandgap semiconductors based on $β$ -Ga $_{2}$ O $_{3}$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's w…

cond-mat.mtrl-sci2022★ 35 cited

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ Films

Fikadu Alema, Carl Peterson, Arkka Bhattacharyya +3

We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ epitaxial films. Transfer le…

physics.app-ph2022★ 71 cited

High-Mobility Tri-Gate $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Power Figure of Merit over 0.9 GW/cm $^{2}$

Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +2

In this letter, fin-shape tri-gate $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm $^{2}$ - a record high for any $β$ -Ga $_{2}$ O$…

physics.app-ph2022★ 68 cited

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema +7

Field-plated (FP) depletion-mode MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN $_{x}$ dielectric…

cond-mat.mtrl-sci2022★ 32 cited

Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends

Jani Jesenovec, Benjamin L. Dutton, Nicholas Stone-Weiss +6

In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 - are obtained, which show +0.20 eV increase in th…

Enhancing the Electron Mobility in Si-doped (010) β-Ga2​O3​ films with Low-Temperature Buffer Layers

Ultra-Wide Bandgap Ga2​O3​-on-SiC MOSFETs

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown β-Ga2​O3​ and β-(Alx​Ga1​−x)2​ O3​ Films

High-Mobility Tri-Gate β-Ga2​O3​ MESFETs with a Power Figure of Merit over 0.9 GW/cm2