S. Krishnamoorthy

activity

20102026

most citedModulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

313 citations · 3.6k across the 69 of their papers we have counts for

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24 papers · 1 filter

physics.app-ph2026

Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage

Jonathan Pratt, Yizheng Liu, Ijaas Mohamed +8

We demonstrate UWBG AlGaN polarization-graded field-effect transistors (PolFETs) incorporating room-temperature sputtered p-type oxide Cr2O3 as a P-N heterojunction gate, enabling…

physics.app-ph2026

VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2

Yizheng Liu, Carl Peterson, Chinmoy Nath Saha +2

Beta-gallium oxide (β-Ga2O3) holds enormous potential for medium voltage range power electronic applications. This work reports VBr > 10 kV/Ron,sp = 43 mΩ*cm2 class edge terminated…

physics.app-ph2026

Evidence of Micron-Scale Ion Damage in (010), (110), and (011) $β - G a_{2} O_{3}$ Epitaxial Layers

Carl Peterson, Chinmoy Nath Saha, Yizheng Liu +2

We report on the experimental observation of up to 11.5 $μ m$ deep charge depletion in (010), (110), and (011) $β - G a_{2} O_{3}$ epitaxial layers due to ion damage from sputtering and ind…

physics.app-ph2025

Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes

Yizheng Liu, Haochen Wang, Carl Peterson +3

This work reports the electrical characteristics comparison study between Cr2O3 and NiOx based heterojunction diodes (HJD) on halide vapor phase epitaxy (HVPE) grown \b{eta}-Ga2O3…

physics.app-ph2025

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)

Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia +2

This work reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based super-heterojunction (SHJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to…

physics.app-ph2025

2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width

Chinmoy Nath Saha, Saurav Roy, Yizheng Liu +2

In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron d…

physics.app-ph2025

Kilovolt-Class $β - G a_{2} O_{3}$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $1 0^{15}$ $c m^{- 3}$ Doped Drift Layers

Carl Peterson, Chinmoy Nath Saha, Rachel Kahler +4

We report on the growth optimization of intentionally low-doped ( $1 0^{15}$ $c m^{- 3}$ ) high-quality $β - G a_{2} O_{3}$ drift layers up to 10 $μ m$ thick via MOCVD and the fabrication of kil…

physics.app-ph2024

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

Yizheng Liu, Saurav Roy, Carl Peterson +2

This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactiv…

physics.app-ph2024★ 36 cited

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $β$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers

Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit +7

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $μ$ m thick $β$ -Ga $_{2}$ O $_{3}$ films with electron concentrations in the 10 $^{15}$ cm$^{…

physics.app-ph2023★ 1 cited

Over 6 $μ$ m thick MOCVD-grown Low-Background Carrier Density (10 $^{15}$ cm $^{- 3}$ ) High-Mobility (010) $β$ -Ga $_{2}$ O $_{3}$ Drift Layers

Arkka Bhattacharyya, Carl Peterson, Kittamet Chanchaiworawit +4

This work reports high carrier mobilities and growth rates, simultaneously in low unintentionally-doped UID (10 $^{15}$ cm $^{- 3}$ ) MOCVD-grown thick $β$ -Ga $_{2}$ O $_{3}$ epitaxial drift…

physics.app-ph2022★ 71 cited

High-Mobility Tri-Gate $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Power Figure of Merit over 0.9 GW/cm $^{2}$

Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +2

In this letter, fin-shape tri-gate $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm $^{2}$ - a record high for any $β$ -Ga $_{2}$ O$…

physics.app-ph2022★ 68 cited

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema +7

Field-plated (FP) depletion-mode MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN $_{x}$ dielectric…

physics.app-ph2021★ 90 cited

Multi-kV class $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm $^{2}$

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +5

We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOV…

physics.app-ph2021

Spalling-induced liftoff and transfer of electronic films using a van der Waals release layer

Eric W. Blanton, Michael J. Motala, Timothy A. Prusnick +7

Heterogeneous integration strategies are increasingly being employed to achieve more compact and capable electronics systems for multiple applications including space, electric veh…

physics.app-ph2021

130 mA/mm $β$ -Ga $_{2}$ O $_{3}$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts

Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +5

We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ metal-semiconductor field effect transistor…

physics.app-ph2020★ 64 cited

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +5

We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is re…

physics.app-ph2020★ 28 cited

Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +3

We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capa…

physics.app-ph2020★ 84 cited

Low Temperature Homoepitaxy Of (010) $β$ -Ga $_{2}$ O $_{3}$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +3

In this work, we report on the growth of high-mobility $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window fo…

physics.app-ph2020★ 8 cited

Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures

Saurav Roy, Arkka Bhattacharyya, Sriram Krishnamoorthy

This work presents the design of beta-Ga2O3 schottky barrier diode using high-k dielectric superjunction to significantly enhance the breakdown voltage vs on-resistance trade-off b…

physics.app-ph2020★ 32 cited

Design of a $β$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diode With p-type III-Nitride Guard Ring for Enhanced Breakdown

Saurav Roy, Arkka Bhattacharyya, Sriram Krishnamoorthy

This work presents the electrostatic analysis of a novel Ga $_{2}$ O $_{3}$ vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the…

physics.app-ph2020★ 65 cited

Schottky Barrier Height Engineering In $β$ -Ga $_{2}$ O $_{3}$ Using SiO $_{2}$ Interlayer Dielectric

Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh +4

This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$ -Ga $_{2}$ O $_{3}$ by insertion of an ultra-thin SiO $_{2}$ dielectric interlaye…

physics.app-ph2019

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone +6

We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass…

physics.app-ph2018★ 2 cited

MBE grown Self-Powered \b{eta}-Ga2O3 MSM Deep-UV Photodetector

Anamika Singh Pratiyush, Sriram Krishnamoorthy, Sandeep Kumar +4

We demonstrate self-powered \b{eta}-Ga2O3 deep-UV metal-semiconductor-metal (MSM) photodetectors (PD) with 0.5% external quantum efficiency (EQE) at zero bias. 150 nm thick (-201)-…

physics.app-ph2017★ 46 cited

Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs

Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +6

In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflect…

Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage

VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2

Evidence of Micron-Scale Ion Damage in (010), (110), and (011) β−Ga2​O3​ Epitaxial Layers

Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)

2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width

Kilovolt-Class β−Ga2​O3​ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally 1015 cm−3 Doped Drift Layers

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

Record-High Electron Mobility and Controlled Low 1015 cm−3 Si-doping in (010) β-Ga2​O3​ Epitaxial Drift Layers

Over 6 μm thick MOCVD-grown Low-Background Carrier Density (1015 cm−3) High-Mobility (010) β-Ga2​O3​ Drift Layers

High-Mobility Tri-Gate β-Ga2​O3​ MESFETs with a Power Figure of Merit over 0.9 GW/cm2

4.4 kV β-Ga2​O3​ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2

Multi-kV class β-Ga2​O3​ MESFETs with a Lateral Figure of Merit up to 355 MW/cm2

Spalling-induced liftoff and transfer of electronic films using a van der Waals release layer

130 mA/mm β-Ga2​O3​ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy

Low Temperature Homoepitaxy Of (010) β-Ga2​O3​ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures

Design of a β-Ga2​O3​ Schottky Barrier Diode With p-type III-Nitride Guard Ring for Enhanced Breakdown

Schottky Barrier Height Engineering In β-Ga2​O3​ Using SiO2​ Interlayer Dielectric

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3

MBE grown Self-Powered \b{eta}-Ga2O3 MSM Deep-UV Photodetector

Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs

Evidence of Micron-Scale Ion Damage in (010), (110), and (011) $β - G a_{2} O_{3}$ Epitaxial Layers

Kilovolt-Class $β - G a_{2} O_{3}$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $1 0^{15}$ $c m^{- 3}$ Doped Drift Layers

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $β$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers

Over 6 $μ$ m thick MOCVD-grown Low-Background Carrier Density (10 $^{15}$ cm $^{- 3}$ ) High-Mobility (010) $β$ -Ga $_{2}$ O $_{3}$ Drift Layers

High-Mobility Tri-Gate $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Power Figure of Merit over 0.9 GW/cm $^{2}$

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

Multi-kV class $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm $^{2}$

130 mA/mm $β$ -Ga $_{2}$ O $_{3}$ MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts

Low Temperature Homoepitaxy Of (010) $β$ -Ga $_{2}$ O $_{3}$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Design of a $β$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diode With p-type III-Nitride Guard Ring for Enhanced Breakdown

Schottky Barrier Height Engineering In $β$ -Ga $_{2}$ O $_{3}$ Using SiO $_{2}$ Interlayer Dielectric