313 citations · 968 across the 15 of their papers we have counts for
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NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination
Yizheng Liu, Saurav Roy, Carl Peterson +2
This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactiv…
Over 6 m thick MOCVD-grown Low-Background Carrier Density (10 cm) High-Mobility (010) -GaO Drift Layers
Arkka Bhattacharyya, Carl Peterson, Kittamet Chanchaiworawit +4
This work reports high carrier mobilities and growth rates, simultaneously in low unintentionally-doped UID (10 cm) MOCVD-grown thick -GaO epitaxial drift…
4.4 kV -GaO Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm
Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema +7
Field-plated (FP) depletion-mode MOVPE-grown -GaO lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN dielectric…
Multi-kV class -GaO MESFETs with a Lateral Figure of Merit up to 355 MW/cm
Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +5
We demonstrate over 3 kV gate-pad-connected field plated (GPFP) -GaO lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOV…
Spalling-induced liftoff and transfer of electronic films using a van der Waals release layer
Eric W. Blanton, Michael J. Motala, Timothy A. Prusnick +7
Heterogeneous integration strategies are increasingly being employed to achieve more compact and capable electronics systems for multiple applications including space, electric veh…
130 mA/mm -GaO MESFET with Low-Temperature MOVPE-Regrown Ohmic Contacts
Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga +5
We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown -GaO metal-semiconductor field effect transistor…