S. Krishnamoorthy

activity

20102026

most citedModulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

313 citations · 3.6k across the 69 of their papers we have counts for

collaborators

Showing cond-mat.mtrl-sciShow all

37 papers · 1 filter

cond-mat.mtrl-sci2026

4 MV/cm (010) $β$ -Ga $_{2}$ O $_{3}$ Heterojunction Diodes Realized by Low-Damage e-Beam NiO $_{x}$ Interlayers

Carl Peterson, Yizheng Liu, Chinmoy Nath Saha +3

We report on the utilization of a low-damage e-beam NiO $_{x}$ deposition process to realize field-plated heterojunction diodes (FP-HJDs) on (010) $β$ -Ga $_{2}$ O $_{3}$ films with high crit…

cond-mat.mtrl-sci2025

Realization of Insulating Buffer Layers via MOCVD-Grown Nitrogen-Doped (010) \b{eta}-Ga2O3

Rachel Kahler, Carl Peterson, Sriram Krishnamoorthy

We present MOCVD-grown, nitrogen-doped \b{eta}-Ga2O3 films as an insulating buffer layer on Fe-doped (010) \b{eta}-Ga2O3 substrates in lieu of 49% HF treatment to remove unintentio…

cond-mat.mtrl-sci2025★ 1 cited

Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm

Yizheng Liu, Haochen Wang, Carl Peterson +3

We report the fabrication of Cr2O3/\b{eta}-Ga2O3 heterojunction diodes using reactive magnetron sputtering of Cr2O3 on highly doped \b{eta}-Ga2O3 bulk substrates along (100), (010)…

cond-mat.mtrl-sci2025

Control of Extraordinary Optical Transmission in Resonant Terahertz Gratings via Lateral Depletion in an AlGaN-GaN Heterostructure

Geofrey Nyabere, Hunter Ellis, Miguel Gomez +7

Periodic metallic gratings on substrates can support a range of electromagnetic modes, such as leaky waveguide, guided-resonant, and Fabry-Perot (FP) cavity modes, which can strong…

cond-mat.mtrl-sci2025★ 1 cited

Orientation-Dependent \b{eta}-Ga2O3 Heterojunction Diode with Atomic Layer Deposition (ALD) Grown NiO

Yizheng Liu, Shane M. W. Witsell, John F. Conley +1

This work reports the demonstration of ALD-deposited NiO/\b{eta}-Ga2O3 heterojunction diodes (HJDs) on low doped drift layer and highly doped (001) & (100) n+ substrates with exper…

cond-mat.mtrl-sci2024

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al $_{2}$ O $_{3}$ on $β$ -Ga $_{2}$ O $_{3}$

Saurav Roy, Arkka Bhattacharyya, Carl Peterson +1

In this article, we investigate the in-situ growth of Al $_{2}$ O $_{3}$ on $β$ -Ga $_{2}$ O $_{3}$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800°C. The Al$_2…

cond-mat.mtrl-sci2024

Effective uniaxial dielectric function tensor and optical phonons in ( $2 ˉ 01$ )-plane oriented $β$ -Ga $_{2}$ O $_{3}$ films with equally-distributed six-fold rotation domains

Alyssa Mock, Steffen Richter, Alexis Papamichail +11

Monoclinic $β$ -Ga $_{2}$ O $_{3}$ films grown on $c$ -plane sapphire have been shown to exhibit six $(2 ˉ 01)$ -plane oriented domains, which are equally-spaced-by-rotation around the su…

cond-mat.mtrl-sci2024

Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3

Nathan D. Rock, Haobo Yang, Brian Eisner +9

Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equi…

cond-mat.mtrl-sci2022

Enhancing the Electron Mobility in Si-doped (010) $β$ -Ga $_{2}$ O $_{3}$ films with Low-Temperature Buffer Layers

Arkka Bhattacharyya, Carl Peterson, Takeki Itoh +6

We demonstrate a new substrate cleaning and buffer growth scheme in $β$ -Ga $_{2}$ O $_{3}$ epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure,…

cond-mat.mtrl-sci2022★ 3 cited

Ultra-Wide Bandgap Ga $_{2}$ O $_{3}$ -on-SiC MOSFETs

Yiwen Song, Arkka Bhattacharyya, Anwarul Karim +8

Ulta-wide bandgap semiconductors based on $β$ -Ga $_{2}$ O $_{3}$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's w…

cond-mat.mtrl-sci2022★ 35 cited

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ Films

Fikadu Alema, Carl Peterson, Arkka Bhattacharyya +3

We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ epitaxial films. Transfer le…

cond-mat.mtrl-sci2022★ 32 cited

Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends

Jani Jesenovec, Benjamin L. Dutton, Nicholas Stone-Weiss +6

In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 - are obtained, which show +0.20 eV increase in th…

cond-mat.mtrl-sci2021★ 189 cited

High Permittivity Dielectric Field-Plated Vertical (001) $β$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm $^{2}$

Saurav Roy, Arkka Bhattacharyya, Praneeth Ranga +3

This paper presents vertical (001) oriented $β$ -Ga $_{2}$ O $_{3}$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift la…

cond-mat.mtrl-sci2021★ 38 cited

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

Saurav Roy, Adrian E. Chmielewski, Arkka Bhattacharyya +5

High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$…

cond-mat.mtrl-sci2021★ 33 cited

N-type doping of LPCVD-grown \b{eta}-Ga2O3 thin films using solid-source germanium

Praneeth Ranga, Arkka Bhattacharyya, Luisa Whittaker-Brooks +2

We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical…

cond-mat.mtrl-sci2020★ 23 cited

Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals

Rujun Sun, Yu Kee Ooi, Arkka Bhattacharyya +4

Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionall…

cond-mat.mtrl-sci2020

The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3

Prashanth Gopalan, Sean Knight, Ashish Chanana +11

The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequenc…

cond-mat.mtrl-sci2020★ 21 cited

Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films

Anil Kumar Rajapitamahuni, Laxman Raju Thoutam, Praneeth Ranga +2

By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase…

cond-mat.mtrl-sci2020

Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence

Rujun Sun, Yu Kee Ooi, Praneeth Ranga +3

In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor…

cond-mat.mtrl-sci2020★ 71 cited

Highly tunable polarization-engineered two-dimensional electron gas in $ε$ -AlGaO3 / $ε$ -Ga2O3 heterostructures

Praneeth Ranga, Sung Beom Cho, Rohan Mishra +1

We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at $ε$ -AlGaO3 / $ε$ -Ga2O3 heterointerface and the effect of spontaneous polarization…

cond-mat.mtrl-sci2020★ 61 cited

Degenerate doping in \b{eta}-Ga2O3 Single Crystals through Hf-doping

Muad Saleh, Joel B. Varley, Jani Jesenovec +4

N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta…

cond-mat.mtrl-sci2019★ 50 cited

Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Ashwin Rishinaramangalam +4

We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are character…

cond-mat.mtrl-sci2019★ 61 cited

MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

Praneeth Ranga, Ashwin Rishinaramangalam, Joel Varley +3

We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure…

cond-mat.mtrl-sci2017★ 65 cited

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +5

We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel…

4 MV/cm (010) β-Ga2​O3​ Heterojunction Diodes Realized by Low-Damage e-Beam NiOx​ Interlayers

Realization of Insulating Buffer Layers via MOCVD-Grown Nitrogen-Doped (010) \b{eta}-Ga2O3

Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm

Control of Extraordinary Optical Transmission in Resonant Terahertz Gratings via Lateral Depletion in an AlGaN-GaN Heterostructure

Orientation-Dependent \b{eta}-Ga2O3 Heterojunction Diode with Atomic Layer Deposition (ALD) Grown NiO

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al2​O3​ on β-Ga2​O3​

Effective uniaxial dielectric function tensor and optical phonons in (2ˉ01)-plane oriented β-Ga2​O3​ films with equally-distributed six-fold rotation domains

Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3

Enhancing the Electron Mobility in Si-doped (010) β-Ga2​O3​ films with Low-Temperature Buffer Layers

Ultra-Wide Bandgap Ga2​O3​-on-SiC MOSFETs

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown β-Ga2​O3​ and β-(Alx​Ga1​−x)2​ O3​ Films

Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends

High Permittivity Dielectric Field-Plated Vertical (001) β-Ga2​O3​ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of > 1 GW/cm2

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

N-type doping of LPCVD-grown \b{eta}-Ga2O3 thin films using solid-source germanium

Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals

The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3

Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films

Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence

Highly tunable polarization-engineered two-dimensional electron gas in ε-AlGaO3 / ε-Ga2O3 heterostructures

Degenerate doping in \b{eta}-Ga2O3 Single Crystals through Hf-doping

Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

4 MV/cm (010) $β$ -Ga $_{2}$ O $_{3}$ Heterojunction Diodes Realized by Low-Damage e-Beam NiO $_{x}$ Interlayers

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al $_{2}$ O $_{3}$ on $β$ -Ga $_{2}$ O $_{3}$

Effective uniaxial dielectric function tensor and optical phonons in ( $2 ˉ 01$ )-plane oriented $β$ -Ga $_{2}$ O $_{3}$ films with equally-distributed six-fold rotation domains

Enhancing the Electron Mobility in Si-doped (010) $β$ -Ga $_{2}$ O $_{3}$ films with Low-Temperature Buffer Layers

Ultra-Wide Bandgap Ga $_{2}$ O $_{3}$ -on-SiC MOSFETs

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ Films

High Permittivity Dielectric Field-Plated Vertical (001) $β$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm $^{2}$

Highly tunable polarization-engineered two-dimensional electron gas in $ε$ -AlGaO3 / $ε$ -Ga2O3 heterostructures