313 citations · 3.6k across the 69 of their papers we have counts for
6 papers · 1 filter
Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor
Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi +8
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulat…
Delta-doped Beta- Gallium Oxide Field Effect Transistor
Sriram Krishnamoorthy, Zhanbo Xia, Sanyam Bajaj +2
We report silicon delta doping in Gallium Oxide (\b{eta}-Ga2O3) grown by plasma assisted molecular beam epitaxy using a shutter pulsing technique. We describe growth procedures tha…
High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector
Anamika Singh Pratiyush, Sriram Krishnamoorthy, Swanand Vishnu Solanke +4
In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin…
AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts
Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy +2
We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic co…
Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +4
We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We…
Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride
Michele Esposto, Sriram Krishnamoorthy, Digbijoy N. Nath +3
We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interfac…