Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas

Abstract

High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the inherent challenges of manipulating holes in wide-gap semiconductors. Building on recent advances in materials growth, this work sets simultaneous records in both on-current (10 mA/mm) and on-off modulation (four orders) for the GaN/AlN wide-bandgap p-FET structure. A compact analytical pFET model is derived, and the results are benchmarked against the various alternatives in the literature, clarifying the heterostructure trade-offs to enable integrated wide-bandgap CMOS for next-generation compact high-power devices.

References in corpus (1)

• Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates

Cited by in corpus (6)

• A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
• The New Nitrides: Layered, Ferroelectric, Magnetic, Metallic and Superconducting Nitrides to Boost the GaN Photonics and Electronics Eco-System
• AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment
• Wurtzite Phonons and the Mobility of a GaN/AlN 2D Hole Gas
• Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors
• Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor