44 citations · 44 across the 1 of their papers we have counts for
2 papers
physics.app-ph2023★ 44 cited
FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
J. Casamento, K. Nomoto, T. S. Nguyen +11
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a n…
physics.app-ph2018
Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas
Samuel James Bader, Reet Chaudhuri, Kazuki Nomoto +6
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind…