31 citations · 70 across the 3 of their papers we have counts for
6 papers
High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers
Reet Chaudhuri, Zhen Chen, David Muller +2
High-conductivity undoped GaN/AlN 2D hole gases (2DHGs), the p-type dual of the AlGaN/GaN 2D electron gases (2DEGs), have offered valuable insights into hole transport in GaN and e…
Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN
Joseph Casamento, John Wright, Reet Chaudhuri +2
RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered…
Wurtzite Phonons and the Mobility of a GaN/AlN 2D Hole Gas
Samuel James Bader, Reet Chaudhuri, Martin Schubert +3
To make complementary GaN electronics more than a pipe dream, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives bot…
Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas
Samuel James Bader, Reet Chaudhuri, Kazuki Nomoto +6
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind…
A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
Reet Chaudhuri, Samuel James Bader, Zhen Chen +4
The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped gallium nitride quantum wells. Experimental results provide unambiguous proof that a 2…
Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells
H. Condori Quispe, S. M. Islam, S. Bader +7
We describe studies on the nanoscale transport dynamics of carriers in strained AlN/GaN/AlN quantum wells: an electron-hole bilayer charge system with large difference in transport…