A polarization-induced 2D hole gas in undoped gallium nitride quantum wells

Abstract

The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped gallium nitride quantum wells. Experimental results provide unambiguous proof that a 2D hole gas in GaN grown on AlN does not need acceptor doping, and can be formed entirely by the difference in the internal polarization fields across the semiconductor heterojunction. The measured 2D hole gas densities, about $4\times 10^{13}$ cm${}^{-2}$, are among the highest among all known semiconductors and remain unchanged down to cryogenic temperatures. Some of the lowest sheet resistances of all wide-bandgap semiconductors are seen. The observed results provide a new probe for studying the valence band structure and transport properties of wide-bandgap nitride interfaces, and simultaneously enable the missing component for gallium nitride-based p-channel transistors for energy-efficient electronics.

arXiv comment20 pages, 4 + 2 figures

References in corpus (6)

• Spontaneous polarization and piezoelectric constants of III-V nitrides
• A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
• Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas
• High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates
• Wurtzite Phonons and the Mobility of a GaN/AlN 2D Hole Gas
• Gate-tunable Electronic Transport in p-type GaSb Quantum Wells

Cited by in corpus (13)

• A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
• High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures
• Perspective: Towards the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: the case of rutile GeO${}_2$
• Two-dimensional hole gas in organic semiconductors
• High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers
• A Unified Theory and Fundamental Rules of Strain-dependent Doping Behaviors in Semiconductors
• N-polar GaN/AlN resonant tunneling diodes
• Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
• N-polar GaN p-n junction diodes with low ideality factors
• Experimental demonstration of a Two-Dimensional Hole Gas (2DHG) in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy
• Effects of the built-in electric field on free and bound excitons in a polar GaN/AlGaN/GaN based heterostructure
• Emergence of giant spin-orbit torque in a two-dimensional hole gas on the hydrogen-terminated diamond surface
• Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor