214 citations · 584 across the 6 of their papers we have counts for
6 papers
Quantum oscillations of holes in GaN
Chuan F. C. Chang, Joseph E. Dill, Zexuan Zhang +12
GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radi…
Wurtzite Phonons and the Mobility of a GaN/AlN 2D Hole Gas
Samuel James Bader, Reet Chaudhuri, Martin Schubert +3
To make complementary GaN electronics more than a pipe dream, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives bot…
Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas
Samuel James Bader, Reet Chaudhuri, Kazuki Nomoto +6
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind…
A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
Reet Chaudhuri, Samuel James Bader, Zhen Chen +4
The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped gallium nitride quantum wells. Experimental results provide unambiguous proof that a 2…
Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells
H. Condori Quispe, S. M. Islam, S. Bader +7
We describe studies on the nanoscale transport dynamics of carriers in strained AlN/GaN/AlN quantum wells: an electron-hole bilayer charge system with large difference in transport…
Coherence and Decay of Higher Energy Levels of a Superconducting Transmon Qubit
Michael J. Peterer, Samuel J. Bader, Xiaoyue Jin +7
We present measurements of coherence and successive decay dynamics of higher energy levels of a superconducting transmon qubit. By applying consecutive -pulses for each sequenti…