31 citations · 70 across the 3 of their papers we have counts for
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cond-mat.mtrl-sci2019
Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN
Joseph Casamento, John Wright, Reet Chaudhuri +2
RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered…
cond-mat.mes-hall2019★ 31 cited
Wurtzite Phonons and the Mobility of a GaN/AlN 2D Hole Gas
Samuel James Bader, Reet Chaudhuri, Martin Schubert +3
To make complementary GaN electronics more than a pipe dream, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives bot…