31 citations · 31 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2019★ 31 cited
Wurtzite Phonons and the Mobility of a GaN/AlN 2D Hole Gas
Samuel James Bader, Reet Chaudhuri, Martin Schubert +3
To make complementary GaN electronics more than a pipe dream, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives bot…
physics.app-ph2018
Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas
Samuel James Bader, Reet Chaudhuri, Kazuki Nomoto +6
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind…