K. Nomoto

activity

20152024

most citedGate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas

115 citations · 445 across the 14 of their papers we have counts for

collaborators

Showing 2017Show all

2 papers · 1 filter

cond-mat.mtrl-sci2017★ 19 cited

Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy

YongJin Cho, Zongyang Hu, Kazuki Nomoto +2

N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-qualit…

cond-mat.mes-hall2017★ 13 cited

Electron Mobility in Polarization-doped Al $_{0 - 0.2}$ GaN with a Low Concentration Near 10 $^{17}$ cm $^{- 3}$

Mingda Zhu, Meng Qi, Kazuki Nomoto +6

In this letter, carrier transport in graded Al $_{x}$ Ga $_{1 - x}$ N with a polarization-induced n-type doping as low as ~ 10 $^{17}$ cm $^{- 3}$ is repor…

Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy

Electron Mobility in Polarization-doped Al0−0.2​GaN with a Low Concentration Near 1017 cm−3

Electron Mobility in Polarization-doped Al $_{0 - 0.2}$ GaN with a Low Concentration Near 10 $^{17}$ cm $^{- 3}$