70 citations · 136 across the 10 of their papers we have counts for
10 papers
Second-Order Optical Nonlinearity of AlScN Films Grown By Molecular Beam Epitaxy
Joongwon Lee, Thai-Son Nguyen, Len van Deurzen +8
Alloys of AlN have rapidly emerged as a material platform for nonlinear optics. In this paper, we measure the second-order optical nonlinearity of AlScN films grown directly on nit…
Leveraging both faces of polar semiconductor wafers for functional devices
Len van Deurzen, Eungkyun Kim, Naomi Pieczulewski +8
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a un…
Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates
Shivali Agrawal, Len van Deurzen, Jimy Encomendero +7
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Curr…
Epitaxial lattice-matched AlScN/GaN distributed Bragg reflectors
Len van Deurzen, Thai-Son Nguyen, Joseph Casamento +2
We demonstrate epitaxial lattice-matched AlScN/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma…
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
Philipp John, Mikel Gómez Ruiz, Len van Deurzen +5
We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are gro…
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Len van Deurzen, Jashan Singhal, Jimy Encomendero +8
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bul…
Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
Jashan Singhal, Jimy Encomendero, Yongjin Cho +6
N-polar AlN epilayers were grown on the N-face of single crystal bulk AlN substrates by plasma assisted molecular beam epitaxy (PA-MBE). A combination of in situ thermal deoxidatio…
Decoherence by Optical Phonons in GaN Defect Single-Photon Emitters
Yifei Geng, Jialun Luo, Len van Deurzen +5
In most single-photon defect emitters, such as those in SiC and diamond, interaction with low-energy acoustic phonons determines the temperature dependence of the decoherence rate…
Epitaxial ScAlN on GaN is a High K Dielectric
Joseph Casamento, Hyunjea Lee, Takuya Maeda +7
Epitaxial ScAlN thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity () values relative to AlN.…
Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs
Len van Deurzen, Mikel Gómez Ruiz, Kevin Lee +8
This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN…