70 citations · 136 across the 10 of their papers we have counts for
3 papers · 1 filter
Leveraging both faces of polar semiconductor wafers for functional devices
Len van Deurzen, Eungkyun Kim, Naomi Pieczulewski +8
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a un…
Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates
Shivali Agrawal, Len van Deurzen, Jimy Encomendero +7
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Curr…
Epitaxial ScAlN on GaN is a High K Dielectric
Joseph Casamento, Hyunjea Lee, Takuya Maeda +7
Epitaxial ScAlN thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity () values relative to AlN.…