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Second-Order Optical Nonlinearity of AlScN Films Grown By Molecular Beam Epitaxy
Joongwon Lee, Thai-Son Nguyen, Len van Deurzen +8
Alloys of AlN have rapidly emerged as a material platform for nonlinear optics. In this paper, we measure the second-order optical nonlinearity of AlScN films grown directly on nit…
Epitaxial lattice-matched AlScN/GaN distributed Bragg reflectors
Len van Deurzen, Thai-Son Nguyen, Joseph Casamento +2
We demonstrate epitaxial lattice-matched AlScN/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma…
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
Philipp John, Mikel Gómez Ruiz, Len van Deurzen +5
We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are gro…
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Len van Deurzen, Jashan Singhal, Jimy Encomendero +8
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bul…
Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
Jashan Singhal, Jimy Encomendero, Yongjin Cho +6
N-polar AlN epilayers were grown on the N-face of single crystal bulk AlN substrates by plasma assisted molecular beam epitaxy (PA-MBE). A combination of in situ thermal deoxidatio…
Decoherence by Optical Phonons in GaN Defect Single-Photon Emitters
Yifei Geng, Jialun Luo, Len van Deurzen +5
In most single-photon defect emitters, such as those in SiC and diamond, interaction with low-energy acoustic phonons determines the temperature dependence of the decoherence rate…
Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs
Len van Deurzen, Mikel Gómez Ruiz, Kevin Lee +8
This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN…