activity
20212024
most citedEpitaxial ScAlN on GaN is a High K Dielectric

70 citations · 145 across the 6 of their papers we have counts for

collaborators

6 papers

cs.RO2024

Kilovolt Pyroelectric Voltage Generation and Electrostatic Actuation With Fluidic Heating

Di Ni, Ved Gund, Landon Ivy +1

Integrated micro power generators are crucial components for micro robotic platforms to demonstrate untethered operation and to achieve autonomy. Current micro robotic electrostati…

cond-mat.mtrl-sci2024★ 17 cited

Ferroelectric AlBN Films by Molecular Beam Epitaxy

Chandrashekhar Savant, Ved Gund, Kazuki Nomoto +13

We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits…

physics.app-ph2023★ 44 cited

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

J. Casamento, K. Nomoto, T. S. Nguyen +11

We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a n…

physics.app-ph2022★ 10 cited

HZO-based FerroNEMS MAC for In-Memory Computing

Shubham Jadhav, Ved Gund, Benyamin Davaji +4

This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computi…

physics.app-ph2021★ 70 cited

Epitaxial ScAlN on GaN is a High K Dielectric

Joseph Casamento, Hyunjea Lee, Takuya Maeda +7

Epitaxial ScAlN thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity () values relative to AlN.…

cond-mat.mtrl-sci2021★ 4 cited

Ferroelectricity in Polar ScAlN/GaN Epitaxial Semiconductor Heterostructures

Joseph Casamento, Ved Gund, Hyunjea Lee +11

Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial fil…