V. Gund

activity

20212024

_{x}

_{1 - x}

N on GaN is a High K Dielectric

70 citations · 145 across the 6 of their papers we have counts for

collaborators

Showing 2021Show all

2 papers · 1 filter

physics.app-ph2021★ 70 cited

Epitaxial Sc $_{x}$ Al $_{1 - x}$ N on GaN is a High K Dielectric

Joseph Casamento, Hyunjea Lee, Takuya Maeda +7

Epitaxial Sc $_{x}$ Al $_{1 - x}$ N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ( $ε_{r}$ ) values relative to AlN.…

cond-mat.mtrl-sci2021★ 4 cited

Ferroelectricity in Polar ScAlN/GaN Epitaxial Semiconductor Heterostructures

Joseph Casamento, Ved Gund, Hyunjea Lee +11

Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial fil…

Epitaxial Scx​Al1−x​N on GaN is a High K Dielectric

Ferroelectricity in Polar ScAlN/GaN Epitaxial Semiconductor Heterostructures

Epitaxial Sc $_{x}$ Al $_{1 - x}$ N on GaN is a High K Dielectric