V. Gund

activity

20212024

_{x}

_{1 - x}

N on GaN is a High K Dielectric

70 citations · 145 across the 6 of their papers we have counts for

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3 papers · 1 filter

physics.app-ph2023★ 44 cited

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

J. Casamento, K. Nomoto, T. S. Nguyen +11

We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a n…

physics.app-ph2022★ 10 cited

HZO-based FerroNEMS MAC for In-Memory Computing

Shubham Jadhav, Ved Gund, Benyamin Davaji +4

This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computi…

physics.app-ph2021★ 70 cited

Epitaxial Sc $_{x}$ Al $_{1 - x}$ N on GaN is a High K Dielectric

Joseph Casamento, Hyunjea Lee, Takuya Maeda +7

Epitaxial Sc $_{x}$ Al $_{1 - x}$ N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ( $ε_{r}$ ) values relative to AlN.…

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

HZO-based FerroNEMS MAC for In-Memory Computing

Epitaxial Scx​Al1−x​N on GaN is a High K Dielectric

Epitaxial Sc $_{x}$ Al $_{1 - x}$ N on GaN is a High K Dielectric