122 citations · 452 across the 14 of their papers we have counts for
6 papers · 1 filter
Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques
Phillip Dang, Zexuan Zhang, Joseph Casamento +6
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque fie…
Oxygen Incorporation in the MBE growth of ScxGa1-xN and ScxAl1-xN
Joseph Casamento, Huili Grace Xing, Debdeep Jena
Secondary-ion Mass Spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium containing nitride semiconductor multilayer heterostructure…
Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory
Xiang Li, Phillip Dang, Joseph Casamento +8
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large…
Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN
Joseph Casamento, John Wright, Reet Chaudhuri +2
RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered…
Rotationally Aligned Hexagonal Boron Nitride on Sapphire by High-Temperature Molecular Beam Epitaxy
Ryan Page, Yongjin Cho, Joseph Casamento +3
Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes…
The New Nitrides: Layered, Ferroelectric, Magnetic, Metallic and Superconducting Nitrides to Boost the GaN Photonics and Electronics Eco-System
Debdeep Jena, Ryan Page, Joseph Casamento +7
The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologi…