J. Casamento

activity

20192025

most citedThe New Nitrides: Layered, Ferroelectric, Magnetic, Metallic and Superconducting Nitrides to Boost the GaN Photonics and Electronics Eco-System

122 citations · 452 across the 14 of their papers we have counts for

collaborators

Showing 2023Show all

3 papers · 1 filter

cond-mat.mtrl-sci2023

Epitaxial lattice-matched Al $_{0.89}$ Sc $_{0.11}$ N/GaN distributed Bragg reflectors

Len van Deurzen, Thai-Son Nguyen, Joseph Casamento +2

We demonstrate epitaxial lattice-matched Al $_{0.89}$ Sc $_{0.11}$ N/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma…

cond-mat.mtrl-sci2023

The interplay between ferroelectricity and electrochemical reactivity on the surface of binary ferroelectric Al $_{x}$ B $_{1 - x}$ N

Yongtao Liu, Anton Ievlev, Joseph Casamento +5

Polarization dynamics and domain structure evolution in ferroelectric Al $_{0.93}$ B $_{0.07}$ N are studied using piezoresponse force microscopy and spectroscopies in ambient and cont…

physics.app-ph2023★ 44 cited

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

J. Casamento, K. Nomoto, T. S. Nguyen +11

We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a n…

Epitaxial lattice-matched Al0.89​Sc0.11​N/GaN distributed Bragg reflectors

The interplay between ferroelectricity and electrochemical reactivity on the surface of binary ferroelectric Alx​B1−x​N

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

Epitaxial lattice-matched Al $_{0.89}$ Sc $_{0.11}$ N/GaN distributed Bragg reflectors

The interplay between ferroelectricity and electrochemical reactivity on the surface of binary ferroelectric Al $_{x}$ B $_{1 - x}$ N